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| BAS21M3T5G High Voltage Switching Diode The BAS21M3T5G device is a spin-off of our popular SOT-23 three-leaded device. It is designed for high voltage switching applications and is housed in the SOT-723 surface mount package. This device is ideal for low-power surface mount applications where board space is at a premium. Features http://onsemi.com * Reduces Board Space * This is a Halide-Free Device * This is a Pb-Free Device MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 250 200 625 Unit Vdc mAdc mAdc 250 V HIGH VOLTAGE SWITCHING DIODE 3 CATHODE 1 ANODE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Symbol PD Max 265 2.1 RqJA PD 470 640 5.1 RqJA TJ, Tstg 195 -55 to +150 Unit mW mW/C C/W mW mW/C C/W C 1 2 3 SOT-723 CASE 631AA STYLE 2 MARKING DIAGRAM AM M 1 AM = Specific Device Code M = Date Code ORDERING INFORMATION Device BAS21M3T5G Package SOT-723 (Pb-Free) Shipping 8000/Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2009 January, 2009 - Rev. 0 1 Publication Order Number: BAS21M3/D BAS21M3T5G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Reverse Voltage Leakage Current (VR = 200 Vdc) (VR = 200 Vdc, TJ = 150C) Reverse Breakdown Voltage (IBR = 100 mAdc) Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) Diode Capacitance (VR = 0, f = 1.0 MHz) Reverse Recovery Time (IF = IR = 30 mAdc, IR(REC) = 3.0 mAdc, RL = 100) 820 W +10 V 2.0 k 100 mH 0.1 mF D.U.T. 50 W OUTPUT PULSE GENERATOR 50 W INPUT SAMPLING OSCILLOSCOPE VR INPUT SIGNAL 90% IR IR(REC) = 3.0 mA OUTPUT PULSE (IF = IR = 30 mA; MEASURED at IR(REC) = 3.0 mA) IF 0.1 mF tr 10% tp t IF trr t Symbol IR Min - - 250 - - - - Max 0.1 100 - 1.0 1.25 5.0 50 pF ns Unit mAdc V(BR) VF Vdc Vdc CD trr Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 30 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 2 BAS21M3T5G 100 150C IF, FORWARD CURRENT (mA) 125C 10 85C 55C 25C 10 150C IR , REVERSE CURRENT (A) 125C 1.0 85C 0.1 55C 0.01 25C 0.001 20 1.0 -55C -40C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VF, FORWARD VOLTAGE (V) 0.8 0.9 1.0 50 80 170 200 110 140 VR, REVERSE VOLTAGE (V) 230 260 Figure 2. VF vs. IF 1.6 Cap CD , DIODE CAPACITANCE (pF) 1.4 1.2 1.0 0.8 0.6 0.4 Figure 3. IR vs. VR 0 1 2 3 4 5 6 7 8 Figure 4. Capacitance VR, REVERSE VOLTAGE (V) http://onsemi.com 3 BAS21M3T5G PACKAGE DIMENSIONS SOT-723 CASE 631AA-01 ISSUE C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. -X- b1 D 3 1 2 A -Y- E b 2X 0.08 (0.0032) X Y L C STYLE 2: PIN 1. ANODE 2. N/C 3. CATHODE HE e DIM A b b1 C D E e HE L MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.15 0.20 0.25 INCHES MIN NOM MAX 0.018 0.020 0.022 0.0059 0.0083 0.0106 0.010 0.012 0.015 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 BSC 0.045 0.047 0.049 0.0059 0.0079 0.0098 SOLDERING FOOTPRINT* 0.40 0.0157 0.40 0.0157 1.0 0.039 0.40 0.0157 0.40 0.0157 0.40 0.0157 SCALE 20:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 4 BAS21M3/D |
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